Intel Corp. at handed results of th...

Intel Corp. at handed results of the companys high-k/metal gate transistor increase at the International Gate Insulator Workshop in Tokyo, Japan, upon November 6. The new high-k gate materials are exigencyed to reduce current leakage as device dimensions shrink and transistor gate dielectrics become thinner. brace days after the announcement, Intel updated its data with better conclusions for NMOS high-k /metal